datasheetbank_Logo
Integrated circuits, Transistor, Semiconductors Search and Datasheet PDF Download Site
HOME  >>>  Samsung  >>> K7M163625A-QC(I)65/75 PDF

K7M163625A-QC(I)65/75 Datasheet - Samsung

DS_K7N163601A image

Part Name
K7M163625A-QC(I)65/75

Other PDF
  no available.

PDF
DOWNLOAD     

page
24 Pages

File Size
272.2 kB

MFG CO.
Samsung
Samsung 

GENERAL DESCRIPTION
The K7N163601A and K7N161801A are 18,874,368-bits Synchronous Static SRAMs.
The NtRAMTM, or No Turnaround Random Access Memory utilizes all the bandwidth in any combination of operating cycles. Address, data inputs, and all control signals except output enable and linear burst order are synchronized to input clock.


FEATURES
• 3.3V+0.165V/-0.165V Power Supply.
• I/O Supply Voltage 3.3V+0.165V/-0.165V for 3.3V I/O or 2.5V+0.4V/-0.125V for 2.5V I/O.
• Byte Writable Function.
• Enable clock and suspend operation.
• Single READ/WRITE control pin.
• Self-Timed Write Cycle.
• Three Chip Enable for simple depth expansion with no data-contention .
• A interleaved burst or a linear burst mode.
• Asynchronous output enable control.
• Power Down mode.
• 100-TQFP-1420A
• 165FBGA(11x15 ball aray) with body size of 13mmx15mm.
• Operating in commeical and industrial temperature range.

Page Link's: 1  2  3  4  5  6  7  8  9  10  More Pages 

Part Name
Description
View
MFG CO.
512Kx36 & 1Mx18 Pipelined NtRAM ( Rev : 2005 )
PDF
Samsung
512Kx36 & 1Mx18 Pipelined NtRAM
PDF
Samsung
512Kx36 & 1Mx18 Synchronous Pipelined SRAM
PDF
Samsung
512Kx36 & 1Mx18-Bit Synchronous Pipelined Burst SRAM
PDF
Samsung
512Kx36 & 1Mx18 DDRII CIO b2 SRAM ( Rev : 2004 )
PDF
Samsung
512Kx36 & 1Mx18 DDRII CIO b4 SRAM
PDF
Samsung
512Kx36 & 1Mx18 DDRII CIO b2 SRAM
PDF
Samsung
512Kx36 & 1Mx18 & 2Mx9 QDRTM II b2 SRAM
PDF
Samsung
512Kx36-bit, 1Mx18-bit QDRTM II b4 SRAM ( Rev : 2004 )
PDF
Samsung
Image Pipelined Processor
PDF
NEC => Renesas Technology

Share Link: GO URL

All Rights Reserved© datasheetbank.com  [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]