K31A60W Datasheet - Toshiba
MFG CO.
Toshiba
Features
(1) Low drain-source on-resistance: RDS(ON) = 0.073 Ω (typ.)
by used to Super Junction Structure : DTMOS
(2) Easy to control Gate switching
(3) Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 1.5 mA)
APPLICATIONs
• Switching Voltage Regulators
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Description
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MFG CO.
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MOSFETs Silicon N-Channel MOS (DTMOSIV) ( Rev : 2012 )
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MOSFETs Silicon N-Channel MOS (DTMOSIV)
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MOSFETs Silicon N-Channel MOS (DTMOSIV)
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MOSFETs Silicon N-Channel MOS (DTMOSIV)
Toshiba
MOSFETs Silicon N-Channel MOS (DTMOSIV)
Toshiba
MOSFETs Silicon N-Channel MOS (DTMOSIV)
Toshiba
MOSFETs Silicon N-Channel MOS (DTMOSIV) ( Rev : 2012 )
Toshiba
MOSFETs Silicon N-Channel MOS (DTMOSIV) ( Rev : 2012 )
Toshiba
