K2013(1998) Datasheet - Toshiba
MFG CO.
Toshiba
AUDIO FREQUENCY POWER AMPLIFIER APPLICATION
• High Breakdown Voltage : VDSS = 180V
• High Forward Transfer Admittance : |Yfs| = 0.7 S (Typ.)
• Complementary to 2SJ313
Part Name
Description
View
MFG CO.
SHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE ( Rev : 1997 )
Toshiba
Silicon N-Channel MOS Type Field Effect Transistor
Toshiba
SILICON N-CHANNEL MOS TYPE FIELD EFFECT TRANSISTOR ( Rev : 1998 )
Toshiba
Field Effect Transistor Silicon N Channel MOS Type
New Jersey Semiconductor
Silicon N-Channel MOS Type Field Effect Transistor ( Rev : 2006 )
Toshiba
Silicon N Channel MOS Type Field Effect Transistor
Toshiba
SILICON N-CHANNEL MOS TYPE FIELD EFFECT TRANSISTOR
Toshiba
N-channel MOS Type Silicon Field Effect Transistor
SANYO -> Panasonic
Field Effect Transistor Silicon N-Channel MOS Type
Unspecified
Field Effect Transistor Silicon N Channel MOS Type
Toshiba
