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J173 Datasheet - New Jersey Semiconductor

2SJ173 image

Part Name
J173

Other PDF
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page
1 Pages

File Size
144 kB

MFG CO.
NJSEMI
New Jersey Semiconductor 

FEATURES
● Low On-Resistance
● High Speed Switching
● Low Drive Current
● 4 V Gate Drive Device
    - Can be driven from 5 V source
● Suitable for Motor Drive, DC-DC Converter, Power Swich and Solenoid Drive

Page Link's: 1 

Part Name
Description
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MFG CO.
Silicon P-Channel MOS FET High Speed Power Switching
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KEXIN Industrial
Silicon P Channel MOS FET High Speed Power Switching
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Hitachi -> Renesas Electronics
Silicon P Channel MOS FET High Speed Power Switching
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Hitachi -> Renesas Electronics
Silicon P Channel MOS FET High Speed Power Switching
PDF
Hitachi -> Renesas Electronics
Silicon P Channel MOS FET High Speed Power Switching
PDF
Hitachi -> Renesas Electronics
Silicon P Channel MOS FET High Speed Power Switching
PDF
Hitachi -> Renesas Electronics
Silicon P Channel MOS FET High Speed Power Switching
PDF
Renesas Electronics
Silicon P Channel MOS FET High Speed Power Switching
PDF
KEXIN Industrial
Silicon P-Channel MOS FET High Speed Power Switching
PDF
Renesas Electronics
Silicon P-Channel MOS FET High Speed Power Switching
PDF
Hitachi -> Renesas Electronics

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