High Current MegaMOS™ FET

N-Channel Enhancement Mode

FEATUREs
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• International standard package
• Fast switching times

APPLICATIONs
• Motor controls
• DC choppers
• Uninterruptable Power Supplies (UPS)
• Switch-mode and resonant-mode

Advantages
• Easy to mount with one screw
   (isolated mounting screw hole)
• Space savings
• High power density