High Current Power MOSFET

N-Channel Enhancement Mode

FEATUREs
● International standard packages
● Low RDS (on) HDMOSTM process
● Rugged polysilicon gate cell structure
● Unclamped Inductive Switching (UIS)
   rated
● Low package inductance
   - easy to drive and to protect

Advantages
● Easy to mount
● Space savings
● High power density