HiPerFET™ Power MOSFETs

N-Channel Enhancement Mode
High dv/dt, Low trr, HDMOSTM Family

FEATUREs
• International standard packages
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
   rated
• Low package inductance
   - easy to drive and to protect
• Fast intrinsic Rectifier

APPLICATIONs
• DC-DC converters
• Synchronous rectification
• Battery chargers
• Switched-mode and resonant-mode
   power supplies
• DC choppers
• AC motor control
• Temperature and lighting controls
• Low voltage relays

Advantages
• Easy to mount with 1 screw (TO-247)
   (isolated mounting screw hole)
• High power surface mountable package
• High power density