HiPerFET Power MOSFET

Single Die MOSFET

FEATUREs
• Low cost direct-copper bonded aluminium package
• Encapsulating epoxy meets UL 94 V-0, flammability classification
• 2500V isolation
• Low drain to case capacitance
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS) rated
• Low package inductance
• Fast intrinsic Rectifier
• Conforms to SOT-227B outline

APPLICATIONs
• DC-DC converters
• Battery chargers
• Switched-mode and resonant-mode power supplies
• DC choppers
• Temperature and lighting controls

Advantages
• Easy to mount
• Space savings
• High power density