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ISL9R30120G2 Datasheet - Fairchild Semiconductor

ISL9R30120G2 image

Part Name
ISL9R30120G2

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6 Pages

File Size
137 kB

MFG CO.
Fairchild
Fairchild Semiconductor 

General Description
The ISL9R30120G2 is a Stealth™ diode optimized for low loss performance in high frequency hard switched applications. The Stealth™ family exhibits low reverse recovery current (IRM(REC)) and exceptionally soft recovery under typical operating conditions.
This device is intended for use as a free wheeling or boost diode in power supplies and other power switching applications. The low IRM(REC) and short ta phase reduce loss in switching transistors. The soft recovery minimizes ringing, expanding the range of conditions under which the diode may be operated without the use of additional snubber circuitry. Consider using the Stealth™ diode with a 1200V NPT IGBT to provide the most efficient and highest power density design at lower cost.
Formerly developmental type TA49415.


FEATUREs
• Soft Recovery . . . . . . . . . . . . . . . . . . . . . . . .tb / ta > 4.5
• Fast Recovery . . . . . . . . . . . . . . . . . . . . . . . . . trr < 56ns
• Operating Temperature . . . . . . . . . . . . . . . . . . . . 150°C
• Reverse Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . 1200V
• Avalanche Energy Rated


APPLICATIONs
• Switch Mode Power Supplies
• Hard Switched PFC Boost Diode
• UPS Free Wheeling Diode
• Motor Drive FWD
• SMPS FWD
• Snubber Diode


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