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IS41C8205 Datasheet - Integrated Silicon Solution

IS41C8205 image

Part Name
IS41C8205

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page
17 Pages

File Size
118.6 kB

MFG CO.
ISSI
Integrated Silicon Solution 

DESCRIPTION
TheISSI IS41C8205 and IS41LV8205 are 2,097,152 x 8-bithighperformance CMOS Dynamic Random Access Memory. The Fast Page Mode allows 2,048 random accesses within a single row with access cycle time as short as 20 ns per 4-bit word.


FEATURES
• Fast Page Mode Access Cycle
• TTL compatible inputs and outputs
• Refresh Interval: -- 2,048 cycles/32 ms
• Refresh Mode: RAS-Only, CAS-before-RAS (CBR), and Hidden
• Single power supply: 5V±10% or 3.3V ± 10%
• Byte Write and Byte Read operation via two CAS
• Industrial temperature range -40°C to 85°C

Page Link's: 1  2  3  4  5  6  7  8  9  10  More Pages 

Part Name
Description
View
MFG CO.
2M x 8 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE
PDF
Integrated Silicon Solution
2M x 8 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
PDF
Integrated Silicon Solution
1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE
PDF
Integrated Circuit Solution Inc
1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE
PDF
Integrated Circuit Solution Inc
1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE
PDF
Integrated Silicon Solution
1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE
PDF
Unspecified
1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE
PDF
Integrated Silicon Solution
4M x 4 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE
PDF
Integrated Circuit Solution Inc
256K x 16 (4-MBIT) DYNAMIC RAM WITH FAST PAGE MODE
PDF
Integrated Circuit Solution Inc
256K x 16 (4-MBIT) DYNAMIC RAM WITH FAST PAGE MODE
PDF
Integrated Silicon Solution

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