Description
This Digital Audio HEXFET® is specifically designed for Class-D audio amplifier applications. This MosFET utilizes the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery and internal Gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD and EMI. Additional features of this MosFET are 175°C operating junction temperature and repetitive avalanche capability. These features combine to make this MosFET a highly efficient, robust and reliable device for Class-D audio amplifier applications.

FEATUREs
• Advanced Process Technology
• Key Parameters Optimized for Class-D Audio
   Amplifier Applications
• Low RDSON for Improved Efficiency
• Low Qg and Qsw for Better THD and Improved
   Efficiency
• Low Qrr for Better THD and Lower EMI
• 175°C Operating Junction Temperature for
   Ruggedness
• Repetitive Avalanche Capability for Robustness and
   Reliability