BVDSS = 200 V
RDS(on) = 0.4Ω
ID = 9 A

FEATURES
♦ Logic-Level Gate Drive
♦ Avalanche Rugged Technology
♦ Rugged Gate Oxide Technology
♦ Lower Input Capacitance
♦ Improved Gate Charge
♦ Extended Safe Operating Area
♦ Lower Leakage Current: 10µA (Max.) @ VDS = 200V
♦ Lower RDS(ON): 0.335Ω (Typ.)