datasheetbank_Logo
Integrated circuits, Transistor, Semiconductors Search and Datasheet PDF Download Site
HOME  >>>  International Rectifier  >>> IRG7PH42U-EP PDF

IRG7PH42U-EP Datasheet - International Rectifier

IRG7PH42UPBF image

Part Name
IRG7PH42U-EP

Other PDF
  2010  

PDF
DOWNLOAD     

page
10 Pages

File Size
283.1 kB

MFG CO.
IR
International Rectifier 

Features
• Low VCE (ON) trench IGBT technology
• Low switching losses
• Maximum junction temperature 175 °C
• Square RBSOA
• 100% of the parts tested for ILM
• Positive VCE (ON) temperature co-efficient
• Tight parameter distribution
• Lead -Free


Benefits
• High efficiency in a wide range of applications
• Suitable for a wide range of switching frequencies due to
   low VCE (ON) and low switching losses
• Rugged transient performance for increased reliability
• Excellent current sharing in parallel operation


APPLICATIONs
• U.P.S
• Welding
• Solar inverter
• Induction heating


Part Name
Description
View
MFG CO.
Insulated Gate Bipolar Transistor
PDF
ON Semiconductor
Insulated Gate Bipolar Transistor
PDF
ON Semiconductor
Insulated Gate Bipolar Transistor
PDF
Toshiba
Insulated Gate Bipolar Transistor
PDF
Motorola => Freescale
Insulated Gate Bipolar Transistor
PDF
Renesas Electronics
Insulated Gate Bipolar Transistor
PDF
International Rectifier
Insulated Gate Bipolar Transistor ( Rev : 2013 )
PDF
International Rectifier
INSULATED GATE BIPOLAR TRANSISTOR
PDF
International Rectifier
INSULATED GATE BIPOLAR TRANSISTOR
PDF
International Rectifier
INSULATED GATE BIPOLAR TRANSISTOR
PDF
International Rectifier

Share Link: GO URL

All Rights Reserved© datasheetbank.com  [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]