IRG4PH50UD Datasheet - International Rectifier
MFG CO.

International Rectifier
Features
• UltraFast: Optimized for high operating
frequencies up to 40 kHz in hard switching,
>200 kHz in resonant mode
• New IGBT design provides tighter
parameter distribution and higher efficiency than
previous generations
• IGBT co-packaged with HEXFREDTM ultrafast,
ultra-soft-recovery anti-parallel diodes for use in
bridge configurations
• Industry standard TO-247AC package
Benefits
• Higher switching frequency capability than
competitive IGBTs
• Highest efficiency available
• HEXFRED diodes optimized for performance with
IGBTs . Minimized recovery characteristics require
less/no snubbing
Part Name
Description
View
MFG CO.
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
International Rectifier
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
International Rectifier
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
International Rectifier
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode ( Rev : 2013 )
International Rectifier
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
Infineon Technologies
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
International Rectifier
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
International Rectifier
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
International Rectifier
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
International Rectifier
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
International Rectifier