IRG4BC30U-SPBF Datasheet - International Rectifier
MFG CO.

International Rectifier
Features
• UltraFast: Optimized for high operating
frequencies 8-40 kHz in hard switching, >200
kHz in resonant mode
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3
• Industry standard D2Pak package
• Lead-Free
Benefits
• Generation 4 IGBTs offer highest efficiency available
• IGBTs optimized for specified application conditions
• Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBTs
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Part Name
Description
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MFG CO.
INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT ( Rev : 2004 )
International Rectifier
INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT
International Rectifier
INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT
International Rectifier
INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT
International Rectifier
INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT ( Rev : 2002 )
International Rectifier
INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT
International Rectifier
INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT
International Rectifier
INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT
International Rectifier
INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT
International Rectifier
INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT ( Rev : 2004 )
International Rectifier