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IRFR210 Datasheet - International Rectifier

IRFR210 image

Part Name
IRFR210

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6 Pages

File Size
170.5 kB

MFG CO.
IR
International Rectifier 

DESCRIPTION
Third Generation MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.

• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Surface Mount (IRFR210/SiHFR210)
• Straight Lead (IRFU210/SiHFU210)
• Available in Tape and Reel
• Fast Switching
• Ease of Paralleling

Page Link's: 1  2  3  4  5  6 

Part Name
Description
View
MFG CO.
HEXFET power MOSFET. VDSS = -200V, RDS(on) = 1.5 Ohm, ID = -3.6A
PDF
International Rectifier
HEXFET Power MOSFET. VDSS = -200V, RDS(on) = 3.0 Ω, ID = -1.9A
PDF
International Rectifier
HEXFET power MOSFET. VDSS = 200V, RDS(on) = 0.18 Ohm, ID = 20A
PDF
International Rectifier
Power MOSFET(Vdss=-200V/ Rds(on)=0.50ohm/ Id=-6.1A)
PDF
Vishay Semiconductors
HEXFET power MOSFET. VDSS = -200V, RDS(on) = 0.80 Ohm, ID = -4.3 A
PDF
International Rectifier
HEXFET Power MOSFET(Vdss=800V, Rds(on)=2.0ohm, Id=5.4A)
PDF
International Rectifier
HEXFET Power MOSFET(VDSS= 40V RDS(on)= 3.7mΩ ID= 75A)
PDF
International Rectifier
HEXFET Power MOSFET(Vdss=600V/ Rds(on)=1.2ohm/ Id=6.2A)
PDF
International Rectifier
HEXFET Power MOSFET Vdss=-55V, Rds(on)=0.06ohm,Id=-31A
PDF
International Rectifier
HEXFEP® Power MOSFET Vdss=200V RDS(on)=0.80Ω ID=4.8A
PDF
International Rectifier

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