Part Name
IRFPF50
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MFG CO.
International Rectifier
IRFPF50 Datasheet - International Rectifier
International Rectifier
DESCRIPTION
Third Generation HEXFETs International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because its isolated mounting hole. It also provides greater creepage distances between pins to meet the requirements of most safety specifications.
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Isolated Central Mounting Hole
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
Part Name
Description
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MFG CO.
HEXFET power MOSFET. VDSS = 250 V, RDS(on) = 0.075 Ohm, ID = 38 A
International Rectifier
HEXFET power MOSFET. VDSS = 500 V, RDS(on) = 0.078 Ohm, ID = 47 A
International Rectifier
HEXFET power MOSFET. VDSS = 500 V, RDS(on) = 0.85 Ohm, ID = 8.8 A
International Rectifier
HEXFET power MOSFET. VDSS = 500 V, RDS(on) = 0.135 Ohm, ID = 32 A
International Rectifier
HEXFET power MOSFET. VDSS = 250 V, RDS(on) = 0.14 Ohm, ID = 23 A
International Rectifier
HEXFET power MOSFET. VDSS = -200 V, RDS(on) = 0.50 Ohm, ID = -12 A
International Rectifier
HEXFET power MOSFET. VDSS = 600V, RDS(on) = 0.75 Ohm, ID = 5.5 A
International Rectifier
HEXFET power MOSFET. VDSS = 400V, RDS(on) = 0.55 Ohm, ID = 5.7 A
International Rectifier
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