General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary,
planar, DMOS technology.

FEATUREs
• 32A, 200V, RDS(on)= 0.085Ω@VGS= 10 V
• Low gate charge ( typical 95 nC)
• Low Crss ( typical 75 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability