IRF830 Datasheet - Transys Electronics
MFG CO.

Transys Electronics
Power Field Effect Transistor
N−Channel Enhancement Mode
• Silicon Gate for Fast Switching Speeds
• Low RDS(on) to Minimize On−Losses, Specified at Elevated
Temperature
• Rugged — SOA is Power Dissipation Limited
• Source−to−Drain Diode Characterized for Use with Inductive Loads
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