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IRF820 Datasheet - International Rectifier

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Part Name
IRF820

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page
6 Pages

File Size
169 kB

MFG CO.
IR
International Rectifier 

DESCRIPTION
Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements

Page Link's: 1  2  3  4  5  6 

Part Name
Description
View
MFG CO.
Power MOSFET(Vdss=500V, Rds(on)=3.0ohm, Id=2.5A)
PDF
International Rectifier
Power MOSFET (Vdss=500V, Rds(on)=3.0ohm, Id=2.1A)
PDF
International Rectifier
Power MOSFET(Vdss=500V/ Rds(on)max=0.52ohm/ Id=11A)
PDF
Vishay Semiconductors
Power MOSFET(Vdss=500V/ Rds(on)max=0.26ohm/ Id=27A)
PDF
Kersemi Electronic Co., Ltd.
Power MOSFET(Vdss=500V/ Rds(on)max=0.26ohm/ Id=27A)
PDF
Vishay Semiconductors
SMPS MOSFET(Vdss=500V/ Rds(on)max=0.23ohm/ Id=24A)
PDF
International Rectifier
HEXFET power MOSFET. VDSS = 500V, RDS(on) = 0.450 Ohm, ID = 14A
PDF
International Rectifier
HEXFET power MOSFET. VDSS = 500V, RDS(on) = 0.26 Ohm, ID = 17A
PDF
International Rectifier
HEXFET Power MOSFET VDSS=500V, RDS(on)typ.=0.135Ω, ID=32A
PDF
International Rectifier
HEXFET power MOSFET. VDSS = 500V, RDS(on) = 3.0 Ohm, ID = 2.1 A
PDF
International Rectifier

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