Description
Specifically designed for Automotive applications, these HEXFET® Power MOSFETs in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these Automotive qualified HEXFET Power MOSFETs are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

● Advanced Process Technology
● Ultra Low On-Resistance
● Dual N and P Channel MOSFET
● Surface Mount
● Available in Tape & Reel
● 150°C Operating Temperature
● Automotive [Q101] Qualified
● Lead-Free