Description
These devices are n-channel, enhancement mode, power MOSFETs designed especially for high speed applications, such as switching power supplies, converters, AC and DC motor controls, relay and solenoid driver and high energy pulse circuits.

• Low RDS(on)
• VGS Rated at ±20 V
• Silicon Gate for Fast Switching Speeds
• IDSS, VDS(on). Specified at Elevated Temperature
• Rugged
• Low Drive Requirements
• Ease of Paralleling