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IRF630S Datasheet - New Jersey Semiconductor

IRF630s image

Part Name
IRF630S

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page
3 Pages

File Size
862 kB

MFG CO.
NJSEMI
New Jersey Semiconductor 

GENERAL DESCRIPTION
N-channel, enhancement mode field-effect power transistor using Trench technology, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. tod.c. converters, motor control circuits and general purpose switching applications.
The IRF630 is supplied in the SOT78 (TO220AB) conventional leaded package
The IRF630S is supplied in the SOT404 (D2PAK) surface mounting package


FEATURES
• Trench technology
• Low on-state resistance
• Fast switching
• Low thermal resistance


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