N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

■ TYPICAL RDS(on) = 0.25 Ω
■ AVALANCE RUGGED TECHNOLOGY
■ 100% AVALANCHE TESTED
■ REPETITIVE AVALANCHE DATA AT 100 °C
■ APPLICATION ORIENTED CHARACHTERIZATION

APPLICATIONS
■ HIGH SPEED SWITCHING
■ UNINTERRUPTIBLE POWER SUPPLY (UPS)
■ MOTOR CONTROL, AUDIO AMPLIFIERS
■ iNDUSTRIAL ACTUATORS
■ DC-DC & DC-AC COVERTERS FOR TELECOM,
   INDUSTRIAL AND CONSUMER ENVIRONMENT.
■ PARTICULARLY SUITABLE FOR ELECTRONIC
   FLUORESCENT LAMP BALLASTS