General Description
The IRF3205 is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching .

FEATUREs
● VDS=55V; ID=105A@ VGS=10V;
   RDS(ON)<6.0mΩ @ VGS=10V
● Ultra Low On-Resistance
● High UIS and UIS 100% Test

APPLICATION
● Hard Switched and High Frequency Circuits
● Uninterruptible Power Supply
● Inverter Application