Power MOS Field-Effect Transistors

N-Channel Enhancement-Mode
Power Field-Effect Transistors

12A and 14A, 60V-100V rDS(0n) = 0.18Ω and 0.25Ω

FEATUREs:
■ SOA is power-dissipation limited
■ Nanosecond switching speeds
■ Linear transfer characteristics
■ High input impedance
■ Majority carrier device