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IPZ60R125P6 Datasheet - Infineon Technologies

IPZ60R125P6 image

Part Name
IPZ60R125P6

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page
15 Pages

File Size
1.1 MB

MFG CO.
Infineon
Infineon Technologies 

Description
CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies.


FEATUREs
• Increased MOSFET dv/dt ruggedness
• Extremely low losses due to very low FOM Rdson^Qg and Eoss
• Very high commutation ruggedness
• Best in class RDS(on)/package
• Easy to use/drive due to driver source pin for better control of the gate
• Pb-free plating, Halogen free mold compound
​​​​​​​• Qualified for industrial grade applications according to JEDEC (J-STD20
   and JESD22)
​​​​​• 4-pin kelvin source concept


APPLICATIONs
   PFC stages, hard switching PWM stages and resonant switching stages
   for e.g. Computing, Server, Telecom and UPS.




Part Name
Description
View
MFG CO.
600V CoolMOS™ P6 Power Transistor
PDF
Infineon Technologies
600V CoolMOS™ P6 Power Transistor
PDF
Infineon Technologies
600V CoolMOS™ P6 Power Transistor
PDF
Infineon Technologies
600V CoolMOS™ P6 Power Transistor
PDF
Infineon Technologies
600V CoolMOS™ P6 Power Transistor
PDF
Infineon Technologies
600V CoolMOS™ P6 Power Transistor
PDF
Infineon Technologies
600V CoolMOS™ P6 Power Transistor
PDF
Infineon Technologies
600V CoolMOS™ P6 Power Transistor
PDF
Infineon Technologies
600V CoolMOS™ P6 Power Transistor
PDF
Infineon Technologies
600V CoolMOS™ P6 Power Transistor
PDF
Infineon Technologies

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