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IPD65R225C7(2020) Datasheet - Infineon Technologies

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Part Name
IPD65R225C7

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14 Pages

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650 kB

MFG CO.
Infineon
Infineon Technologies 

650V CoolMOS™ C7 Power Device

CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C7 series combines the experience of the leading SJ MOSFET supplier with high class innovation.


FEATUREs
• Increased MOSFET dv/dt ruggedness
• Better efficiency due to lowest in market FOM RDS(on) *Eoss and RDS(on)*Qg
• Best in class RDS(on) in TO220/TO247/DPAK and D2PAK
• Easy to use/drive
• Pb-free plating, Halogen free mold compound


Benefits
• Enabling higher system efficiency
• Enabling higher frequency/increased power density solutions
• System cost/size savings due to reduced cooling requirements
• Higher system reliability due to lower operating temperatures

Potential applications
   PFC stages and hard switching PWM stages for e.g. Computing, Server,
   Telecom, UPS and Solar.


Part Name
Description
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MFG CO.
650V CoolMOS™ C7 Power Device
PDF
Infineon Technologies
650V CoolMOS™ C7 Power Device ( Rev : 2020 )
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Infineon Technologies
650V CoolMOS™ C7 Power Device
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Infineon Technologies
650V CoolMOS™ C7 Power Device
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Infineon Technologies
650V CoolMOS™ C7 Power Device ( Rev : 2020 )
PDF
Infineon Technologies
650V CoolMOS™ C7 Power Device
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Infineon Technologies
650V CoolMOS™ C7 Power Device
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Infineon Technologies
650V CoolMOS™ C7 Power Transistor
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Infineon Technologies
650V CoolMOS™ C7 Power Transistor ( Rev : 2013 )
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Infineon Technologies
650V CoolMOS™ C7 Power Transistor ( Rev : 2013 )
PDF
Infineon Technologies

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