IC42S16160-7TIG Datasheet - Integrated Circuit Solution Inc
MFG CO.

Integrated Circuit Solution Inc
DESCRIPTION
The IC42S16160 are high-speed 256M-bits synchronous dynamic random-access memories, organized as 4M x 16 x 4 (word x bit x bank), respectively.
FEATURES
• Single 3.3V (± 0.3V) power supply
• High speed clock cycle time -6: 166MHz, -7: 133MHz
• Fully synchronous operation referenced to clock rising edge
• Possible to assert random column access in every cycle
• Quad internal banks contorlled by BA0 & BA1 (Bank Select)
• Byte control by LDQM and UDQM for IC42S16160
• Programmable Wrap sequence (Sequential / Interleave)
• Programmable burst length (1, 2, 4, 8 and full page)
• Programmable CAS latency (2 and 3)
• Automatic precharge and controlled precharge
• CBR (Auto) refresh and self refresh
• LVTTL compatible inputs and outputs
• 8,192refresh cycles / 64ms
• Burst termination by Burst stop and Precharge command
• Package 400mil 54-pin TSOP-2
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Part Name
Description
View
MFG CO.
1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
Integrated Silicon Solution
1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
Integrated Silicon Solution
1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
Integrated Silicon Solution
1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
Integrated Silicon Solution
1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
Integrated Silicon Solution
1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM ( Rev : 2008 )
Integrated Silicon Solution
1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
Integrated Silicon Solution
1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
Integrated Silicon Solution
1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
Integrated Silicon Solution
512K x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM
Integrated Circuit Solution Inc