Description
The HWF1686RA is a medium power GaAs MESFET designed for various RF and Microwave applications. It is presently offered in a low cost, surface-mountable ceramic package.

FEATUREs
• Output Power: P1dB=30 dBm (typ.)
• High Gain: GL=16 Db (typ.)
• High Efficiency: PAE =45% (typ.)
• High Linearity: IP3=45 dBm (typ.)
• Low Cost