HUML2020L3 Datasheet - ROHM Semiconductor
MFG CO.

ROHM Semiconductor
Features
1) Suitable for Middle Power Driver.
2) Low VCE(sat)
VCE(sat)=200mV(Max.).
(IC/IB=800mA/80mA)
3) High collector current.
IC=2.5A(max),ICP=5A(max)
4) Leadless small SMD package (HUML2020L3)
Excellent thermal and electrical conductivity.
APPLICATION
LOW FREQUENCY AMPLIFIER
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Part Name
Description
View
MFG CO.
PNP -2.5A -120V Middle Power Transistor
ROHM Semiconductor
Middle Power Transistor (80V / 2.5A)
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Middle Power Transistor(120V/1.5A) ( Rev : 2016 )
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Middle Power Transistor(120V/1.5A)
ROHM Semiconductor
Middle Power Transistor (-80V / -2.5A)
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Middle Power Transistor(120V/700mA)
ROHM Semiconductor
PNP -0.7A -120V Middle Power Transistor
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PNP -1.5A -120V Middle Power Transistor
ROHM Semiconductor
NPN 3A 120V Power Transistor
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NPN 6A 30V Middle Power Transistor
ROHM Semiconductor