Description
The HGTG40N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between +25°C and +150°C.

FEATUREs
• 70A, 600V at TC = +25°C
• Square Switching SOA Capability
• Typical Fall Time - 160ns at +150°C
• Short Circuit Rating
• Low Conduction Loss