The HGTD1N120BNS and HGTP1N120BN are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor.

FEATUREs
• 5.3A, 1200V, TC = 25oC
• 1200V Switching SOA Capability
• Typical EOFF . . . . . . . . . . . . . . . . . . 120µJ at TJ = 150oC
• Short Circuit Rating
• Low Conduction Loss
• Avalanche Rated
• Temperature Compensating SABER™ Model
   Thermal Impedance SPICE Model
   www.fairchildsemi.com
• Related Literature
   - TB334, “Guidelines for Soldering Surface Mount
      Components to PC Boards”