GS88136AT-250 Datasheet - Giga Semiconductor
MFG CO.

Giga Semiconductor
Functional Description
Applications
The GS88118/36AT/D is a 9,437,184-bit high performance synchronous SRAM with a 2-bit burst address counter. Although of a type originally developed for Level 2 Cache applications supporting high performance CPUs, the device now finds application in synchronous SRAM applications, ranging from DSP main store to networking chip set support.
FEATUREs
• IEEE 1149.1 JTAG-compatible Boundary Scan
• 2.5 V or 3.3 V +10%/–10% core power supply
• 2.5 V or 3.3 V I/O supply
• LBO pin for Linear or Interleaved Burst mode
• Internal input resistors on mode pins allow floating mode pins
• Byte Write (BW) and/or Global Write (GW) operation
• Internal self-timed write cycle
• Automatic power-down for portable applications
• JEDEC-standard packages
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Description
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MFG CO.
512K x 18, 256K x 32, 256K x 36 9Mb Synchronous Burst SRAMs
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512K x 18, 256K x 32, 256K x 36 9Mb Synchronous Burst SRAMs
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512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
Giga Semiconductor
512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
Giga Semiconductor
512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
Giga Semiconductor
512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs ( Rev : 2002 )
Giga Semiconductor
512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
Giga Semiconductor
512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
Giga Semiconductor
512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
Giga Semiconductor