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GP1006HC0G Datasheet - Taiwan Memory Technology

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Part Name
GP1006HC0G

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page
4 Pages

File Size
190.5 kB

MFG CO.
TMT
Taiwan Memory Technology 

FEATURES
- High efficiency, low VF
- High current capability
- High surge current capability
- Low power loss
- Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21

Page Link's: 1  2  3  4 

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