Description
This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of automotive applications.

FEATUREs
• BVCEO > -60V
• IC = -3A High Continuous Current
• ICM = -6A Peak Pulse Current
• Low Saturation Voltage VCE(sat) < -300mV @ -1A
• Complementary NPN Type: FZT651Q
• Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
• PPAP Capable (Note 4)

APPLICATIONs
• Automotive Lighting
• MOSFET and IGBT Gate Driving