FZT688B(1995) Datasheet - Diodes Incorporated.
MFG CO.

Diodes Incorporated.
FEATURES
* Extremely low equivalent on resistance; RCE(sat) 83mΩ at 3A
* Gain of 400 at IC=3 Amps and very low saturation voltage
APPLICATIONS
* Flash gun convertors & Battery powered circuits
Part Name
Description
View
MFG CO.
SOT223 NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ( Rev : 1995 )
Diodes Incorporated.
SOT223 NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR
Zetex => Diodes
SOT223 NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR
Zetex => Diodes
SOT223 NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR
Zetex => Diodes
SOT223 NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR
Zetex => Diodes
SOT223 NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ( Rev : 1995 )
Diodes Incorporated.
SOT223 NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ( Rev : 1998 )
Diodes Incorporated.
SOT223 NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ( Rev : 2001 )
Diodes Incorporated.
SOT223 NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ( Rev : 1997 )
Diodes Incorporated.
SOT223 NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ( Rev : 1997 )
Diodes Incorporated.