FX50SMJ-06 Datasheet - Renesas Electronics
MFG CO.

Renesas Electronics
Features
• Drive voltage : 4 V
• VDSS : –60 V
• rDS(ON) (max) : 18.9 mΩ
• ID : –50 A
• Integrated Fast Recovery Diode (TYP.) : 70 ns
Page Link's:
1
2
3
4
5
6
7
Part Name
Description
View
MFG CO.
High-Speed Switching Use Pch Power MOS FET
Renesas Electronics
High-Speed Switching Use Pch Power MOS FET
Renesas Electronics
High-Speed Switching Use Pch Power MOS FET
Renesas Electronics
High-Speed Switching Use Pch Power MOS FET
Renesas Electronics
High-Speed Switching Use Pch Power MOS FET
Renesas Electronics
High-Speed Switching Use Pch Power MOS FET
Renesas Electronics
High-Speed Switching Use Pch Power MOS FET
Renesas Electronics
High-Speed Switching Use Pch Power MOS FET
Renesas Electronics
High-Speed Switching Use Pch Power MOS FET
Renesas Electronics
High-Speed Switching Use Pch Power MOS FET ( Rev : 2004 )
Renesas Electronics