FX50SMJ-03 Datasheet - Renesas Electronics
MFG CO.

Renesas Electronics
Features
• Drive voltage : 4 V
• VDSS : – 30 V
• rDS(ON) (max) : 35 mΩ
• ID : – 50 A
• Recovery Time of the Integrated Fast Recovery Diode (TYP.) : 55 ns
APPLICATIONs
Motor control, lamp control, solenoid control, DC-DC converters, etc.
Page Link's:
1
2
3
4
5
6
7
Part Name
Description
View
MFG CO.
High-Speed Switching Use Pch Power MOS FET
Renesas Electronics
High-Speed Switching Use Pch Power MOS FET
Renesas Electronics
High-Speed Switching Use Pch Power MOS FET
Renesas Electronics
High-Speed Switching Use Pch Power MOS FET
Renesas Electronics
High-Speed Switching Use Pch Power MOS FET
Renesas Electronics
High-Speed Switching Use Pch Power MOS FET ( Rev : 2010 )
Renesas Electronics
High-Speed Switching Use Pch Power MOS FET
Renesas Electronics
High-Speed Switching Use Pch Power MOS FET
Renesas Electronics
High-Speed Switching Use Pch Power MOS FET
Renesas Electronics
High-Speed Switching Use Pch Power MOS FET ( Rev : 2004 )
Renesas Electronics