MOSFET : P-Channel Silicon MOSFET
SBD : Schottky Barrier Diode

FEATUREs
• Composite type with a low ON-resistance, ultrahigh-speed switching, low voltage drive, P-channel MOSFET and a short reverse recovery time, low forward voltage schottky barrier diode facilitating high-density mounting.
• The FW507 incorporates two chips being equivalent to the MCH3312 and the SB1003M in one package.