FS30ASJ-06F-T13(2010) Datasheet - Renesas Electronics
MFG CO.

Renesas Electronics
Features
• Drive voltage : 4 V
• VDSS : 60 V
• rDS(ON) (max) : 22 mΩ
• ID : 30 A
• Recovery Time of the Integrated Fast Recovery Diode (TYP.) : 50 ns
APPLICATIONs
Motor control, lamp control, solenoid control, DC-DC converters, etc.
Part Name
Description
View
MFG CO.
High-Speed Switching Use Nch Power MOS FET
Renesas Electronics
High-Speed Switching Use Nch Power MOS FET
Renesas Electronics
High-Speed Switching Use Nch Power MOS FET
Renesas Electronics
High-Speed Switching Use Nch Power MOS FET
Renesas Electronics
High-Speed Switching Use Nch Power MOS FET
Renesas Electronics
High-Speed Switching Use Nch Power MOS FET
Renesas Electronics
High-Speed Switching Use Nch Power MOS FET
Renesas Electronics
High-Speed Switching Use Nch Power MOS FET
Renesas Electronics
High-Speed Switching Use Nch Power MOS FET
Renesas Electronics
High-Speed Switching Use Nch Power MOS FET
Renesas Electronics