Description
   This advanced MOSFET technology has been es pecially tailored to reduce on-st ate resistance, and to provi de super ior sw itching performa nce and high avalanche energy strength. These devices are suitable for switched mode powe r supplies , audio ampl ifier, DC motor control, and variable switching power applications.

FEATUREs
• VDS (V) = -60V
• ID = -12A (VGS = -10V)
• RDS(ON) < 135mΩ (VGS = -10V)