900V N-Channel MOSFET

Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technologlogy.

FEATUREs
• 8A, 900V, RDS(on) = 1.9Ω @VGS = 10 V
• Low gate charge ( typical 35 nC)
• Low Crss ( typical 12pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability