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FQA13N80(2006) Datasheet - Fairchild Semiconductor

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Part Name
FQA13N80

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  2001   2007   lastest PDF  

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9 Pages

File Size
816 kB

MFG CO.
Fairchild
Fairchild Semiconductor 

Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies, active power factor correction, electronic lamp ballast based on half bridge topology.


FEATUREs
• 12.6A, 800V, RDS(on) = 0.75Ω @VGS = 10 V
• Low gate charge ( typical 68 nC)
• Low Crss ( typical 30pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

Page Link's: 1  2  3  4  5  6  7  8  9 

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