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FP1189 Datasheet - ETC1

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Part Name
FP1189

Description

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10 Pages

File Size
371.1 kB

MFG CO.
ETC1
ETC1 

[WJ Communications, Inc]

Product Description
The FP1189 is a high performance ½-Watt HFET (Heterostructure FET) in a low-cost SOT-89 surfacemount package. This device works optimally at a drain bias of +8 V and 125 mA to achieve +40 dBm output IP3 performance and an output power of +27 dBm at 1-dB compression, while providing 20.5 dB gain at 900 MHz.

Product Features
• 50 – 4000 MHz
• +27 dBm P1dB
• +40 dBm Output IP3
• High Drain Efficiency
• 20.5 dB Gain @ 900 MHz
• MTTF >100 Years
• SOT-89 SMT Package


APPLICATIONs
• Mobile Infrastructure
• CATV / DBS
• W-LAN / ISM
• RFID
• Defense / Homeland Security
• Fixed Wireless

Page Link's: 1  2  3  4  5  6  7  8  9  10  More Pages 

Part Name
Description
View
MFG CO.
½-Watt HFET ( Rev : 2006 )
PDF
WJ Communications => Triquint
½ - Watt HFET
PDF
WJ Communications => Triquint
½-Watt HFET ( Rev : 2003 )
PDF
WJ Communications => Triquint
1 Watt HFET
PDF
Unspecified
1 watt HFET
PDF
WJ Communications => Triquint
1 - Watt HFET
PDF
WJ Communications => Triquint
1/2 watt HFET
PDF
WJ Communications => Triquint
DC-3 GHz, 1.0 Watt GaAs HFET
PDF
Unspecified
DC-3 GHz, 2.0 Watt GaAs HFET ( Rev : RevB )
PDF
Stanford Microdevices
0.05-6 GHz, 0.5 Watt GaAs HFET
PDF
Sirenza Microdevices => RFMD

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