NPN SILICON TRANSISTOR EPITAXIAL PLANAR TRANSISTOR

□ JUNCTION TEMPERATURE ----------------------------- +150℃ MAX
□ STORAGE TEMPERATURE ------------------------------ -55~ + 150℃
□ MAX POWER DISSIPATION Ta=25℃ ----------------- 250mW
□ MAX VOLTAGE AND CURRENT Ta=25℃
   VCBO COLLECTOR TO BASE VOLTAGE------------- 300V
   VCEO COLLECTOR TO EMITTER VOLTAGE-------- 300V
   VEBO EMITTER TO BASE VOLTAGE------------------ 5.0V
   IC COLLECTOR CURRENT-------------------------------- 500mA