General Description
Insulated Gate Bipolar Transistors (IGBTs) with trench gate structure have superior performance in conduction and switching to planar gate structure, and also have wide noise immunity. These devices are well suitable for IH applications

FEATUREs
• High Speed Switching
• Low Saturation Voltage : VCE(sat) = 2.5V @ IC = 60A
• High Input Impedance
• Built-in Fast Recovery Diode

APPLICATION
    Home Appliance, Induction Heater, IH JAR, Micro Wave Oven