General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.

FEATUREs
● 12 A, 30 V.
   RDS(ON) = 12 mW @ VGS = 10 V.
   RDS(ON) = 14.5 mW @ VGS = 4.5 V
● High performance trench technology for extremely low RDS(ON)
● Low gate charge (18 nC typical)
● High power and current handling capability

APPLICATIONs
● DC/DC converter