General Description
This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

FEATUREs
■ 13 A, 30 V. RDS(ON) = 0.008 Ω @ VGS = 10 V RDS(ON) = 0.010Ω @ VGS = 4.5 V.
■ Fast switching speed.
■ Low gate charge (35 nC tyical).
■ High performance trench technology for extremely low RDS(ON).
■ High power and current handling capability.