General Description
These N-Channel MOSFETs have been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.

FEATUREs
• 3 A, 100 V. RDS(ON) = 125 mW @ VGS = 10 V RDS(ON) = 135 mW @ VGS = 6 V
• Fast switching speed
• Low gate charge (14 nC typ)
• High performance trench technology for extremely low RDS(ON)
• High power and current handling capability